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tocon abc1 sic photodetector Photos Catalog - ECeurope Market
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Tocon Abc1 Sic Uv PhotodetectorElectrical equipment and components - Shenzhen week Technology Ltd - China - August 2, 2018 - check with company for priceTOCON_ABC1 Broadband SiC based UV photodetector with integrated amplifier / Properties of the TOCON_ABC1 SiC UV photodetector • Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap • 0 … 5 V voltage output • peak wavelength ...
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Tocon C1 Uvc Photodetector With Integrated AmplifierElectrical equipment and components - Shenzhen week Technology Ltd - China - September 13, 2017 - check with company for priceTOCON_C1 UVC-only SiC based UV photodetector with integrated amplifier / 1. Properties of the TOCON_C1 UV Photodetector • UVC-only SiC based UV photodetector in TO5 housing • 0 … 5 V voltage output • peak wavelength at 275 nm • max. radiation (satura...
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Tocon B4 Uvb Uvc Photodetector With Integrated AmplifierElectrical equipment and components - Shenzhen week Technology Ltd - China - August 9, 2018 - check with company for priceTOCON_B4 UVB+UVC SiC based UV photodetector with integrated amplifier / Properties of the TOCON_B4 UV Photodetector • UVB+UVC SiC based UV photodetector in TO5 housing with diffusor • spectral response compliant to CIE087 • 0 … 5 V voltage output • p...
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Tocon A4 Uva Photodetector With Integrated AmplifierElectrical equipment and components - Shenzhen week Technology Ltd - China - August 24, 2018 - check with company for priceTOCON_A4 UVA-only SiC based UV photodetector with integrated amplifier / Properties of the TOCON_A4 UV Photodetector • UVA-only SiC based UV photodetector in TO5 housing with concentrator lens cap • 0 … 5 V voltage output • peak wavelength at 331 nm ...
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Tocon Blue4 Gap Blue Light Detector With Integrated AmplifierElectrical equipment and components - Shenzhen week Technology Ltd - China - September 5, 2018 - check with company for priceTOCON_BLUE4 GaP blue light detector with integrated amplifier / Properties of the TOCON_BLUE4 GaP Blue Light Detector • GaP detector for blue light radiation in TO5 housing • detection of incoherent blue light according to guideline 2006/25/EG • 0 … ...
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Sg01d 5lens Concentrator Lens Sic Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - July 27, 2017 - check with company for priceSG01D-5LENS Concent rator lens SiC based UV photodiode Avirtual = 11.0 mm2 / Properties of the SG01D-5LENS UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection • Radiation sensitive area A = 11.0 mm2 • TO5 h...
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Sg01xl C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01XL-C5 UVC-only SiC based UV photodiode A = 7, 6 mm2 / Properties of the SG01XL-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 7, 6 mm2 • TO5 hermetically sealed metal housing,...
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Sg01d 18 Broadband Sic Based Uv Photodiode A = 0 50 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01D-18 Broadband SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
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Dummy Grade Sic Substrate Wafer 6 Inch Dia 150mm 4h N 500 Mm ThicknessMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 18, 2018 - check with company for price6inch sic substrates, 6inch sic wafers, sic crystal ingots, sic crystal block, sic semiconductor substrates, Silicon Carbide Wafer - - - - 6 inch diameter, Silicon Carbide (SiC) Substrate Specification | | Grade | Zero MPD Grade | Production Grade | ...
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Customized Size Square Sic Chip Low Lattice Mismatch With High ThermalMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 19, 2018 - check with company for price10x10mm 5x5mm customized square sic substrates, 1inch sic wafers, sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer we offers semiconductor materials, especially for SiC wafer, SiC substate of polytype...
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Super Quality Silicon Carbide Sic Ceramic Ring Seal RingsMetal and mineral industries - Lianyungang Baibo New Material Co., Ltd. - China - July 23, 2018 - 30.00 Dollar US$Silicon Carbide was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and and made into grinding wheels and other abrasive products. Today the material has been developed ...
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99 Percent Sic Of High Density F36 Grit Green Silicon Carbide Grain Used In Producing Grinding WheeGrinding and polishing and smoothing materials - Shandong HIJO Precision Abrasives Co., Ltd. - China - August 14, 2018 - 1600.00 Dollar US$General Silicon Carbide Information Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis...
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Sg01m C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - August 24, 2018 - check with company for priceSG01M-C5 UVC-only SiC based UV photodiode A = 0.20 mm2 / Properties of the SG01M-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.20 mm2 • TO5 hermetically sealed metal housing, 1...
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Sg01l 18iso90 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - September 12, 2018 - check with company for priceSG01L-18ISO90 Broadband SiC based UV photodiode A = 1.0 mm2 / Properties of the SG01L-18ISO90 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.0 mm2 • TO18 hermetically sealed metal housing, two isolated pin...
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Sg01xl 5iso90 Broadband Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - September 28, 2018 - check with company for priceSG01XL-5ISO90 Broadband SiC based UV photodiode A = 7.6 mm2 / Properties of the SG01XL-5ISO90 UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 7.6 mm2 • TO5 hermetically sealed metal housing, short cap, two is...
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Sg01s 18s Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - October 9, 2018 - check with company for priceSG01S-18S Broadband SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-18S UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO18 hermetically sealed metal housing, short cap, 1 isolated pi...
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Sg01s C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - October 22, 2018 - check with company for priceSG01S-C5 UVC-only SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-C5 UV photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, 1...
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Sg01d B18 Uvb Only Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - November 8, 2018 - check with company for priceSG01D-B18 UVB-only SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-B18 UV Photodiode • UVB-only sensitivity, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
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Sg01s 5 Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 14, 2018 - check with company for priceSG01S-5 Broadband SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-5 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, short cap, 1 isolated p • 1...
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Sg01l 18 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 19, 2018 - check with company for priceSG01L-18 Broadband SiC based UV photodiode A = 1.00 mm2 / Properties of the SG01L-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.00 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...