3 Brazil 
3 UK 
2 India 
1 Belgium 
1 Poland 
1 Singapore 
1 China 
1 Hong Kong 
1 Iran 
silicon carbide sic ceramic ring seal rings Photos Catalog - page 5 - ECeurope Market
-
Sintered Silicon Carbide BushingSintered parts - Oustek Materials Technology Limited - China - April 7, 2020 - 10.00 Dollar US$The silicon carbide wear-resistant bush is a new type of wear-resistant bush. It excels in anti-corrosion and can reduce the equipment wearing, vibration and noise. Oustek’s silicon carbide wear-resistant bush adopts isostatic pressing, net size sint...
-
Sintered Silicon Carbide Tube Liner Bend LiningSintered parts - Oustek Materials Technology Limited - China - April 8, 2020 - 10.00 Dollar US$Silicon carbide tube liner, elbow liner, bend liner has high hardness, wear resistance, impact resistance, especially high-temperature resistance, acid and alkali corrosion resistance, with actual service life more than 7 times that of polyurethane. ...
-
Sintered Silicon Carbide Bulletproof Body ArmorSintered parts - Oustek Materials Technology Limited - China - April 8, 2020 - 100.00 Dollar US$With the advantages of high hardness, good absorption capacity, lightweight, excellent ballistic performance and high-temperature resistance, silicon carbide bulletproof ceramics is the ideal material for producing bulletproof armors for bulletproof ...
-
High Quality Silicon Carbide Heating ElementsElectronic manufacturing machinery - Spark Industry(Henan)Co.,LTD - China - August 28, 2022 - 10.00 Dollar US$Silicon carbide rod is a rod-shaped, tubular non-metallic high-temperature electric heating element made of high-purity green hexagonal silicon carbide as the main raw material, processed into a blank according to a certain material ratio, and sinter...
-
Graphite Silicon Carbide CrucibleMinerals and ores and metals - Shandong Mingte Ceramic Materials Co., Ltd - China - June 25, 2025 - contact company for priceGraphite silicon carbide crucible is a melting container that combines graphite and silicon carbide materials, mainly used for melting and casting of non-ferrous metals. Its basic structure consists of silicon carbide (SiC) and graphite. Looking for ...
-
Silicon Wafer Cutting Titanium Carbide Guide WheelAlloys - Zhuzhou Hastion High-Tech Materials Co.,Ltd. - China - July 29, 2025 - 13.50 Dollar US$Carbide titanium carbide guide wheel has a wide range of working temperature, -100 ℃ to 600 ℃ environment with stable performance, in the low-temperature freezing pipe production or high-temperature hot rolling process can be used normally. The hub a...
-
Sg01d 5lens Concentrator Lens Sic Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - July 27, 2017 - check with company for priceSG01D-5LENS Concent rator lens SiC based UV photodiode Avirtual = 11.0 mm2 / Properties of the SG01D-5LENS UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection • Radiation sensitive area A = 11.0 mm2 • TO5 h...
-
Sg01xl C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01XL-C5 UVC-only SiC based UV photodiode A = 7, 6 mm2 / Properties of the SG01XL-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 7, 6 mm2 • TO5 hermetically sealed metal housing,...
-
Sg01d 18 Broadband Sic Based Uv Photodiode A = 0 50 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01D-18 Broadband SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
-
Dummy Grade Sic Substrate Wafer 6 Inch Dia 150mm 4h N 500 Mm ThicknessMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 18, 2018 - check with company for price6inch sic substrates, 6inch sic wafers, sic crystal ingots, sic crystal block, sic semiconductor substrates, Silicon Carbide Wafer - - - - 6 inch diameter, Silicon Carbide (SiC) Substrate Specification | | Grade | Zero MPD Grade | Production Grade | ...
-
Customized Size Square Sic Chip Low Lattice Mismatch With High ThermalMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 19, 2018 - check with company for price10x10mm 5x5mm customized square sic substrates, 1inch sic wafers, sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer we offers semiconductor materials, especially for SiC wafer, SiC substate of polytype...
-
Tocon Abc1 Sic Uv PhotodetectorElectrical equipment and components - Shenzhen week Technology Ltd - China - August 2, 2018 - check with company for priceTOCON_ABC1 Broadband SiC based UV photodetector with integrated amplifier / Properties of the TOCON_ABC1 SiC UV photodetector • Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap • 0 … 5 V voltage output • peak wavelength ...
-
Sg01m C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - August 24, 2018 - check with company for priceSG01M-C5 UVC-only SiC based UV photodiode A = 0.20 mm2 / Properties of the SG01M-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.20 mm2 • TO5 hermetically sealed metal housing, 1...
-
Sg01l 18iso90 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - September 12, 2018 - check with company for priceSG01L-18ISO90 Broadband SiC based UV photodiode A = 1.0 mm2 / Properties of the SG01L-18ISO90 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.0 mm2 • TO18 hermetically sealed metal housing, two isolated pin...
-
Sg01xl 5iso90 Broadband Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - September 28, 2018 - check with company for priceSG01XL-5ISO90 Broadband SiC based UV photodiode A = 7.6 mm2 / Properties of the SG01XL-5ISO90 UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 7.6 mm2 • TO5 hermetically sealed metal housing, short cap, two is...
-
Sg01s 18s Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - October 9, 2018 - check with company for priceSG01S-18S Broadband SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-18S UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO18 hermetically sealed metal housing, short cap, 1 isolated pi...
-
Sg01s C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - October 22, 2018 - check with company for priceSG01S-C5 UVC-only SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-C5 UV photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, 1...
-
Sg01d B18 Uvb Only Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - November 8, 2018 - check with company for priceSG01D-B18 UVB-only SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-B18 UV Photodiode • UVB-only sensitivity, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
-
Sg01s 5 Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 14, 2018 - check with company for priceSG01S-5 Broadband SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-5 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, short cap, 1 isolated p • 1...
-
Sg01l 18 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 19, 2018 - check with company for priceSG01L-18 Broadband SiC based UV photodiode A = 1.00 mm2 / Properties of the SG01L-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.00 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...