4 USA 
1 Iran 
European and Premium listings
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Sell Natural Red Coral BeadsJewelry - Angus & Pixon - Poland - August 15, 2026 - 80.00 Dollar US$Sell natural coral beads ( Isididae ) Place of origin of the raw material: Sea of Japan Length of the strings: 16 inch. Weight of the strings: approx from 70g to 170g each. Shape: oval, irregular. Colour : Red( modified)
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Sell Natural Coral BeadsJewelry - Angus & Pixon - Poland - August 15, 2026 - 80.00 Dollar US$Sell natural coral beads ( family Isididae ) Place of origin of the raw material: Sea of Japan Length of the strings: 16 inch. Weight of the strings: approx from 70g to 170g each. Shape: oval, irregular. Colour : Red, Orange ( modified)
sg01l 18iso90 broadband sic photodiode mm2 Photos Catalog - ECeurope Market
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Sg01l 18iso90 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - September 12, 2018 - check with company for priceSG01L-18ISO90 Broadband SiC based UV photodiode A = 1.0 mm2 / Properties of the SG01L-18ISO90 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.0 mm2 • TO18 hermetically sealed metal housing, two isolated pin...
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Sg01l 18 Broadband Sic Based Uv Photodiode A = 1 0 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 19, 2018 - check with company for priceSG01L-18 Broadband SiC based UV photodiode A = 1.00 mm2 / Properties of the SG01L-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 1.00 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
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Sg01m 18iso90 Broadband Sic Based Uv Photodiode A = 0 20 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - December 7, 2018 - check with company for priceSG01M-18ISO90 Broadband SiC based UV photodiode A = 0.20 mm2 / Properties of the SG01M-18ISO90 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.20 mm2 • TO18 hermetically sealed metal housing, two isolated p...
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Sg01s 18iso90 Broadband Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - January 21, 2019 - check with company for priceSG01S-18ISO90 Broadband SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-18ISO90 UV Photodiode • Broadband UVA+UVB+UVC, high chip stability PTB reported • Active Area A = 0.06 mm2 • TO18 hermetically sealed metal housing, two isolated p...
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Sg01d 18 Broadband Sic Based Uv Photodiode A = 0 50 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01D-18 Broadband SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-18 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
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Sg01s 18s Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - October 9, 2018 - check with company for priceSG01S-18S Broadband SiC based UV photodiode A = 0.06 mm2 Properties of the SG01S-18S UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO18 hermetically sealed metal housing, short cap, 1 isolated pi...
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Sg01s 5 Broadband Sic Based Uv Photodiode A = 0 06 Mm2Electrical equipment and components - Shenzhen week Technology Ltd - China - November 14, 2018 - check with company for priceSG01S-5 Broadband SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-5 UV Photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, short cap, 1 isolated p • 1...
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Sg01xl 5iso90 Broadband Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - September 28, 2018 - check with company for priceSG01XL-5ISO90 Broadband SiC based UV photodiode A = 7.6 mm2 / Properties of the SG01XL-5ISO90 UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability • Active Area A = 7.6 mm2 • TO5 hermetically sealed metal housing, short cap, two is...
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Sg01d 5lens Concentrator Lens Sic Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - July 27, 2017 - check with company for priceSG01D-5LENS Concent rator lens SiC based UV photodiode Avirtual = 11.0 mm2 / Properties of the SG01D-5LENS UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability, for fame detection • Radiation sensitive area A = 11.0 mm2 • TO5 h...
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Sg01xl C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - December 19, 2017 - check with company for priceSG01XL-C5 UVC-only SiC based UV photodiode A = 7, 6 mm2 / Properties of the SG01XL-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 7, 6 mm2 • TO5 hermetically sealed metal housing,...
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Sg01m C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - August 24, 2018 - check with company for priceSG01M-C5 UVC-only SiC based UV photodiode A = 0.20 mm2 / Properties of the SG01M-C5 UV Photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.20 mm2 • TO5 hermetically sealed metal housing, 1...
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Sg01s C5 Uvc Only Sic Based Uv Photodiode With Standard Dvgw W294Electrical equipment and components - Shenzhen week Technology Ltd - China - October 22, 2018 - check with company for priceSG01S-C5 UVC-only SiC based UV photodiode A = 0.06 mm2 / Properties of the SG01S-C5 UV photodiode • UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability • Active Area A = 0.06 mm2 • TO5 hermetically sealed metal housing, 1...
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Sg01d B18 Uvb Only Sic Based Uv PhotodiodeElectrical equipment and components - Shenzhen week Technology Ltd - China - November 8, 2018 - check with company for priceSG01D-B18 UVB-only SiC based UV photodiode A = 0.50 mm2 / Properties of the SG01D-B18 UV Photodiode • UVB-only sensitivity, PTB reported high chip stability • Active Area A = 0.50 mm2 • TO18 hermetically sealed metal housing, 1 isolated pin and 1 cas...
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Waterproofing Agent Dimethyl Methylhydrogen Siloxane20 40 Mm2 S ViscosityCompounds and mixtures - Lyrin Industrial Corporation Limited - China - January 23, 2018 - check with company for priceMethyl Hydrogen Polysiloxane CAS NO.: 63148-57-2 Structural Formula: (CH3)3SIO[(CH3)(H)SIO]nSI (CH3)3 Product Standard: Enterprise Standard Q/LXAX 14-2005 Methyl Hydrogen Silicone Fluid Technical Indexes: - - - - Appearance | Colorless transparent li...
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Hirschmann Mm2 4tx1Electrical equipment and components - Moore Automation LIMITED - China - November 21, 2018 - 66.00 Dollar US$IN STOCK!!! 1 year warranty for all, 15 days return About Our Product ①Allen-Bradley: 1715, ICS, 1746, 1747 ②Schneider: QUANTUN, MODICON ③General electric: IC697, IC695, IS200.DS200 ④SIEMENS: 6ES5, 6DD, 6GK ⑤Foxboro：FBM203, FCP240/270 ⑥ABB: DCS, BAIL...
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Dummy Grade Sic Substrate Wafer 6 Inch Dia 150mm 4h N 500 Mm ThicknessMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 18, 2018 - check with company for price6inch sic substrates, 6inch sic wafers, sic crystal ingots, sic crystal block, sic semiconductor substrates, Silicon Carbide Wafer - - - - 6 inch diameter, Silicon Carbide (SiC) Substrate Specification | | Grade | Zero MPD Grade | Production Grade | ...
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Customized Size Square Sic Chip Low Lattice Mismatch With High ThermalMetal treatment machinery - SHANGHAI FAMOUS TRADE CO.,LTD - China - March 19, 2018 - check with company for price10x10mm 5x5mm customized square sic substrates, 1inch sic wafers, sic crystal chips, sic semiconductor substrates, 6H-N SIC wafer, High purity silicon carbide wafer we offers semiconductor materials, especially for SiC wafer, SiC substate of polytype...
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Super Quality Silicon Carbide Sic Ceramic Ring Seal RingsMetal and mineral industries - Lianyungang Baibo New Material Co., Ltd. - China - July 23, 2018 - 30.00 Dollar US$Silicon Carbide was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and and made into grinding wheels and other abrasive products. Today the material has been developed ...
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Tocon Abc1 Sic Uv PhotodetectorElectrical equipment and components - Shenzhen week Technology Ltd - China - August 2, 2018 - check with company for priceTOCON_ABC1 Broadband SiC based UV photodetector with integrated amplifier / Properties of the TOCON_ABC1 SiC UV photodetector • Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap • 0 … 5 V voltage output • peak wavelength ...
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99 Percent Sic Of High Density F36 Grit Green Silicon Carbide Grain Used In Producing Grinding WheeGrinding and polishing and smoothing materials - Shandong HIJO Precision Abrasives Co., Ltd. - China - August 14, 2018 - 1600.00 Dollar US$General Silicon Carbide Information Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis...