7 Singapore 
2 Australia 
2 Canada 
1 Vietnam 
plastic precision mould components Photos Catalog - page 38 - ECeurope Market
-
Utsource Electronic Components Rd07mvs1Printed circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 1.92 Dollar US$DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications FEATURES Hig h power gain: Pout>7W, Gp>10dB@Vdd=7.2V, f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520M...
-
Utsource Electronic Components Tpa3113d2Printed circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 0.72 Dollar US$1. Description The TPA3113D2 is a 6-W (per channel) efficient, Class-D audio power amplifier for driving bridged-tied stereo speakers. Advanced EMI Suppression Technology enables the use of inexpensive ferrite bead filters at the outputs while meetin...
-
Utsource Electronic Components Mp2363dn Lf ZPrinted circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 0.48 Dollar US$1. Description The MP2363 is a non-synchronous step-down regulator with an integrated Power MOSFET. It achieves 3A continuous output current over a wide input supply range with excellent load and line regulation.Current mode operation provides fast t...
-
Utsource Electronic Components M51995fpPrinted circuits and integrated circuits and microassemblies - utsource - China - April 14, 2017 - 0.72 Dollar US$1. Description M51995A is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply.This IC can directly drive the MOS-FET with fast rise and fast fall output pulse.Type M51995A has t...
-
Utsource Electronic Components Irfba1405pPrinted circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 0.79 Dollar US$1. Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this MOSFET a...
-
Utsource Electronic Components 2sc2166Printed circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 0.96 Dollar US$1. Description 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. 2. Features >High power gain: Gpe 13.8dB= 12V, P0 = 6W, f = 27MHz >Emitter ballasted construction fo...
-
Injection Components Molding Pg ProcessManufacturing support services - DONGGUAN YIZE MOULD CO,.LTD - China - December 23, 2020 - 5.50 Dollar US$Custom Mold Maker Plastic Parts Injection Components Molding PG process 2021 mold tungsten carbide round bar sisazhietyize Model Number RFQ-MTCL-ARP20-026 2 Shaping Mode Punching Mold Product Material Metal Product Ve hicle Mould Material Steel / Alu...
-
Utsource Electronic Components Mrf286Printed circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 9.75 Dollar US$1. Description Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applic...
-
Prosthetic Components For Lower LimbsMachine made parts - Xi'an Sunrise Industrial Co., Ltd - China - August 27, 2020 - 25.00 Dollar US$Product name: prosthetic components Material: titanium, Stainless steel ( Various stainless steel types depend on different requests of customers) Sunrise machined prosthetic components for customers as per the drawings or samples. Different with tit...
-
Utsource Electronic Components Hcpl7800Printed circuits and integrated circuits and microassemblies - utsource - China - April 11, 2017 - 1.44 Dollar US$1. Description The HCPL-7800 high CMR isolation amplifier provides a unique combination of features ideally suited for motor control circuit designers. The product provides the precision and stability needed to accurately monitor motor current in hig...
-
Utsource Electronic Components Mr4040Printed circuits and integrated circuits and microassemblies - utsource - China - April 13, 2017 - 0.72 Dollar US$1. Description Designed for Automotive Applications (Alternator) requiring Reverse Avalanche Capability for use as Transient Voltage Suppressor. Developed to suppress transients in automotive systems, this device operates in the forward mode as Stand...
-
Utsource Electronic Components Fqpf9n50cPrinted circuits and integrated circuits and microassemblies - utsource - China - April 13, 2017 - 0.29 Dollar US$1. Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide s...
-
Utsource Electronic Components Irfp064nPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.96 Dollar US$1. Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that ...
-
Utsource Electronic Components Tda1562qPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 9.00 Dollar US$1. Description The TDA1562Q is a monolithic integrated 70 W/4ΩBridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17-lead DIL-bent-SIL plastic power package.The device can be used for car audio systems (e.g. car, radio and boosters) a...
-
Utsource Electronic Components Fqpf12n60cPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.36 Dollar US$1. Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide s...
-
Utsource Electronic Components Rjh3044Printed circuits and integrated circuits and microassemblies - utsource - China - May 4, 2017 - 0.45 Dollar US$1. Description Collector to Emitter voltage VCES 360 V Gate to Emitter voltage VGES ±30 V Collector current Ic 35 A Collector peak current ic(peak) Note1 250 A Collector to emitter diode Forward peak current iDF(peak) Note1 100 A Collector dissipatio...
-
Utsource Electronic Components 2n3904Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.05 Dollar US$1. Description NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 2....
-
Utsource Electronic Components Rfp40n10Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.43 Dollar US$1. Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. T...
-
Utsource Electronic Components Ltm455gwPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.29 Dollar US$1. Description this specification shall cover the characteristics of ceramic fil ter with 455khz, intened for use in transceivers, etc.environmental condition measurement shall be carried out at the reference temperature of 25℃ ±2℃. it shall be possi...
-
Utsource Electronic Components Irf244Printed circuits and integrated circuits and microassemblies - utsource - China - April 13, 2017 - 1.44 Dollar US$1. Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. A...