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Utsource Electronic Components Rjp30h1dpd - China

price: 0.38 Dollar US$

Utsource Electronic Components Rjp30h1dpd

Products Photos Catalog Utsource Electronic Photos Catalog

1 - Description

This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology.

This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

2 - Features

> Trench gate and thin wafer technology (G6H-II series)

> High speed switching: tr = 80 ns typ., tf = 150 ns typ.

> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

> Low leak current: ICES = 1 A max.


Company Contact:


  • Phone: 0755-23959113

  • Address: 10B2,BLOCK B,WORLD TRADE PLAZA,FUHONGA RD.,FUTIAN,SHENZHEN,51803 3 CHINA 电话:0755-23959113, SHENZHEN , GUANGDONG , China

  • Email: Email


Published date: April 25, 2017

  • Business Description: UTSOURCE is an amazing online electronic components store，provides different types such as electronic components , passive components, arm development board, Cell Phone Repair Parts，etc., and various product types，we also provide satisfying one-stop package service for customers.

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