19 USA 
3 Vietnam 
3 China 
1 Germany 
1 Japan 
1 Spain 
1 Korea 
1 Georgia 
1 Russia 
1 Ghana 
aluminum stamping bending assembly sandblasting furniture components manufacturers Photos Catalog - page 66 - ECeurope Market
-
Utsource Electronic Components Kia7217apPrinted circuits and integrated circuits and microassemblies - utsource - China - March 27, 2017 - 0.72 Dollar US$1. Description Plastic medium-por complementary silicon transistors designed for general -purpose ampilfier and low speed swftchlng applicabons 8 ampere Darlington complementary silicon power transistors 60-100 volts80 waus 2. Features >Output Pow...
-
Utsource Electronic Components K2837Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe DMOS technology.This advanced technology has been especially tailored To minimize on-state resistance, provide super...
-
Utsource Electronic Components Hat2215rPrinted circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching 1. PW ≤ 10 μs, duty cycle ≤ 1 % 2. Value at Tch = 25°C, Rg ≥ 50Ω 3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s 4. ...
-
Utsource Electronic Components Tle6220gpPrinted circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description Quad Low-Side Switch in Smart Power Technology (SPT) with a Serial Peripheral Interface (SPI) and four open drain DMOS output stages. The TLE 6220 GP is protected by embedded protection functions and designed for automotive and industr...
-
Utsource Electronic Components B20nk50zPrinted circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description The Super MESH series is obtained through an extreme optimization of ST’s well established strip- based Power MESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt cap...
-
Utsource Electronic Components Ixgh40n60b2d1Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching PFC circuits Uninterruptible power supplies (UPS)Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers 2....
-
Utsource Electronic Components Irfb4227Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area...
-
Utsource Electronic Components 2n5458Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the o...
-
Utsource Electronic Components Rd70hvf1Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. 2. Features >High power and High Gain: >Pout>70W, Gp>10.6dB @Vdd=12.5V, f=175MHz >Pout>50W, Gp>7.0dB @Vdd=...
-
Utsource Electronic Components Ca3059Printed circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description 1. Limiter–Power Supply—Allows operation of the CA3059 directly from an AC line. Suggested dropping resistor (R) values are given in the table below. 2. Differential On/Off Sensing Amplifier—Tests for condition of external sensors or i...
-
Utsource Electronic Components Tda8920bthPrinted circuits and integrated circuits and microassemblies - utsource - China - April 5, 2017 - 1.00 Dollar US$1. Description The TDA8920B is a high efficiency class-D audio power amplifier with very low dissipation. The typical output power is 2 × 100 W. The device is available in the HSOP24 power package and in the DBS23P through-hole power package. The amp...
-
Utsource Electronic Components An28f010 120Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.96 Dollar US$1. Description Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory.The 28F010 adds electrical chip-erasure and reprogramming to famlliar EPROM technology.Memory cont...
-
Utsource Electronic Components Ltm455gwPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.29 Dollar US$1. Description this specification shall cover the characteristics of ceramic fil ter with 455khz, intened for use in transceivers, etc.environmental condition measurement shall be carried out at the reference temperature of 25℃ ±2℃. it shall be possi...
-
Utsource Electronic Components 6di15s 050Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 5.85 Dollar US$1. Description General Purpose Inverter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools Robotics (Servo Drive for Robots)Switching Power Supplies for Welding Machines Absolute Maximum Ratings 2. Features >High Arm Short...
-
Utsource Electronic Components Rfp40n10Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.43 Dollar US$1. Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. T...
-
Utsource Electronic Components 2n3904Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.05 Dollar US$1. Description NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 2....
-
Utsource Electronic Components Fqp17p06Printed circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.48 Dollar US$1. Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide s...
-
Utsource Electronic Components Fqpf12n60cPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.36 Dollar US$1. Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide s...
-
Utsource Electronic Components Tda1562qPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 9.00 Dollar US$1. Description The TDA1562Q is a monolithic integrated 70 W/4ΩBridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17-lead DIL-bent-SIL plastic power package.The device can be used for car audio systems (e.g. car, radio and boosters) a...
-
Utsource Electronic Components Irfp064nPrinted circuits and integrated circuits and microassemblies - utsource - China - April 7, 2017 - 0.96 Dollar US$1. Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that ...